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| 2SK3586-01 FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) TO-220AB Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Non-repetitive Avalanche current Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation Symbol VDS VDSX *5 ID ID(puls] VGS IAS *2 EAS *1 dVDS/dt *4 dV/dt *3 PD Ta=25C Tc=25C Ratings 100 70 50 200 30 50 465 20 5 2.02 135 +150 -55 to +150 Unit V V A A V A mJ kV/s kV/s W Equivalent circuit schematic Drain(D) Gate(G) Source(S) Operating and storage Tch C temperature range Tstg C *1 L=223H, Vcc=48V *2 Tch< 150C *3 IF < -ID, -di/dt=50A/s, Vcc < BVDSS, Tch < 150C = = = = *4 VDS <100V *5 VGS=-30V = Electrical characteristics (Tc =25C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV VSD trr Qrr Test Conditions ID= 250A VGS=0V ID= 250A VDS=VGS Tch=25C VDS=100V VGS=0V Tch=125C VDS=80V VGS=0V VGS=30V VDS=0V ID=25A VGS=10V ID=25A VDS=25V VDS=75V VGS=0V f=1MHz VCC=48V ID=25A VGS=10V RGS=10 VCC=50V ID=50A VGS=10V L=100H Tch=25C IF=50A VGS=0V Tch=25C IF=50A VGS=0V -di/dt=100A/s Tch=25C Min. 100 3.0 Typ. Max. 5.0 25 250 100 25 2745 690 57 30 53 75 35 78 24 27 1.65 Units V V A nA m S pF 15 10 19 30 1830 460 38 20 35 50 23 52 16 18 1.10 0.1 0.4 ns nC 50 A V s C Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient Min. Typ. Max. 0.926 62.0 Units C/W C/W www.fujielectric.co.jp/denshi/scd 1 2SK3586-01 Characteristics Allowable Power Dissipation PD=f(Tc) FUJI POWER MOSFET Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=48V,I(AV)<=50A 500 200 175 400 150 125 100 75 50 100 25 0 0 25 50 75 100 125 150 0 0 25 50 75 100 125 150 300 EAV [mJ] PD [W] 200 Tc [C] starting Tch [C] Typical Output Characteristics ID=f(VDS):80s Pulse test,Tch=25C 200 20V 10V 160 100 Typical Transfer Characteristic ID=f(VGS):80s Pulse test, VDS=25V,Tch=25C ID [A] 8V 80 7.5V 7.0V 40 6.5V 6.0V VGS=5.5V 0 0 2 4 6 8 10 12 ID[A] 120 10 1 0.1 0 1 2 3 4 5 6 7 8 9 10 VDS [V] VGS[V] Typical Transconductance gfs=f(ID):80s Pulse test, VDS=25V,Tch=25C 100 0.15 Typical Drain-Source on-state Resistance RDS(on)=f(ID):80s Pulse test, Tch=25C VGS= 5.5V 6.0V 6.5V 7.0V 7.5V 0.12 10 RDS(on) [ ] 0.09 gfs [S] 8V 0.06 10V 1 0.03 20V 0.1 0.1 0.00 0 40 80 120 160 200 1 10 100 ID [A] ID [A] 2 2SK3586-01 FUJI POWER MOSFET 60 Drain-Source On-state Resistance RDS(on)=f(Tch):ID=25A,VGS=10V 7.0 6.5 Gate Threshold Voltage vs. Tch A VGS(th)=f(Tch):VDS=VGS,ID=250 50 6.0 5.5 5.0 max. RDS(on) [ m ] 40 VGS(th) [V] 4.5 4.0 3.5 3.0 min. 30 max. 20 2.5 typ. 2.0 1.5 10 1.0 0.5 0 -50 -25 0 25 50 75 100 125 150 0.0 -50 -25 0 25 50 75 100 125 150 Tch [C] Tch [C] Typical Gate Charge Characteristics VGS=f(Qg):ID=50A, Tch=25C 10 14 12 10 1 Typical Capacitance C=f(VDS):VGS=0V,f=1MHz Ciss 0 10 VGS [V] 8 6 C [nF] Vcc= 50V Coss 10 4 2 -1 Crss 0 0 20 40 60 80 10 -2 10 -1 10 0 10 1 10 2 Qg [nC] VDS [V] Typical Forward Characteristics of Reverse Diode IF=f(VSD):80s Pulse test,Tch=25C 100 10 3 Typical Switching Characteristics vs. ID t=f(ID):Vcc=48V, VGS=10V, RG=10 tf 10 2 10 td(off) tr IF [A] t [ns] td(on) 1 10 1 0.1 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 10 0 10 -1 10 0 10 1 10 2 VSD [V] ID [A] 3 2SK3586-01 Transient Thermal Impedance Zth(ch-c)=f(t):D=0 FUJI POWER MOSFET 10 1 10 0 Zth(ch-c) [C/W] 10 -1 10 -2 10 -3 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 t [sec] Maximum Avalanche Current Pulsewidth 10 2 IAV=f(tAV):starting Tch=25C. Vcc=48V Single Pulse Avalanche Current I AV [A] 10 1 10 0 10 -1 10 -8 10 -2 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 tAV [sec] 4 |
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